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NX7002BKR

MOSFET 60V N-channel Trench MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-NX7002BKR
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 155
  • Description: MOSFET 60V N-channel Trench MOSFET (Kg)

Details

Tags

Parameters
Power Dissipation-Max 310mW Ta 1.67W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 23.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C 270mA Ta
Gate Charge (Qg) (Max) @ Vgs 1nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 270mA
JEDEC-95 Code TO-236AB
Drain Current-Max (Abs) (ID) 0.27A
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 2.2Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard IEC-60134
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet

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