Parameters | |
---|---|
Element Configuration | Single |
Power Dissipation | 1W |
Case Connection | COLLECTOR |
Transistor Type | NPN - Darlington |
Collector Emitter Voltage (VCEO) | 110V |
Max Collector Current | 1.5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A 5V |
Current - Collector Cutoff (Max) | 10nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
Collector Emitter Breakdown Voltage | 110V |
Transition Frequency | 150MHz |
Collector Emitter Saturation Voltage | 1.5V |
Max Breakdown Voltage | 110V |
Frequency - Transition | 150MHz |
Collector Base Voltage (VCBO) | 140V |
Emitter Base Voltage (VEBO) | 10V |
hFE Min | 200 |
Max Junction Temperature (Tj) | 150°C |
Height | 1.8mm |
Length | 6.5mm |
Width | 3.56mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Weight | 188mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1997 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | 11V |
Max Power Dissipation | 1W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 1.5A |
Base Part Number | NZT605 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Polarity | NPN |