Parameters | |
---|---|
Number of Channels | 1 |
Output Configuration | Phototransistor |
Power Dissipation | 100mW |
Forward Current | 50mA |
Rise Time | 10μs |
Forward Voltage | 1.3V |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 30mA |
Sensing Distance | 0.125 (3.18mm) |
Collector Emitter Breakdown Voltage | 30V |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 30mA |
Wavelength | 890 nm |
Sensing Method | Through-Beam |
Max Breakdown Voltage | 30V |
Current - DC Forward (If) (Max) | 50mA |
Input Current | 20mA |
Reverse Voltage (DC) | 2V |
Height | 10.8mm |
Length | 24.61mm |
Width | 24.7mm |
REACH SVHC | Unknown |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Screw, Through Hole |
Mounting Type | Through Hole |
Package / Case | PCB Mount |
Number of Pins | 4 |
Operating Temperature | -40°C~85°C |
Packaging | Bulk |
Published | 1997 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Type | Unamplified |
Max Operating Temperature | 85°C |
Min Operating Temperature | -40°C |
Output Voltage | 30V |