OPB856Z
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | M12 Threaded Body, Nut |
| Package / Case | Module, Connector |
| Number of Pins | 2 |
| Operating Temperature | -40°C~85°C |
| Packaging | Bulk |
| Published | 2006 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Output Voltage | 30V |
| Output Configuration | Phototransistor |
| Power Dissipation | 100mW |
| Output Current | 1.8mA |
| Forward Current | 40mA |
| Collector Emitter Voltage (VCEO) | 30V |
| Sensing Distance | 12 (304.8mm) |
| Collector Emitter Breakdown Voltage | 30V |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Wavelength | 935 nm |
| Sensing Method | Through-Beam |
| Max Breakdown Voltage | 30V |
| Current - DC Forward (If) (Max) | 40mA |
| Input Current | 20mA |
| Touchscreen | Infrared (IR) |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
