OPS667
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | T-1 |
| Number of Pins | 1 |
| Operating Temperature | -40°C~100°C |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Number of Elements | 1 |
| Polarity | NPN |
| Output Configuration | Phototransistor |
| Power Dissipation | 100mW |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Wavelength | 935 nm |
| Sensing Method | Through-Beam |
| Max Breakdown Voltage | 30V |
| Current - DC Forward (If) (Max) | 50mA |
| Dark Current | 100nA |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
