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PBSS302PD,115

PBSS302PD,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PBSS302PD,115
  • Package: SC-74, SOT-457
  • Datasheet: PDF
  • Stock: 914
  • Description: PBSS302PD,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

Details

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Parameters
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 175 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 450mV @ 600mA, 6A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 110MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -5V
hFE Min 30
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 110MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PBSS302P
Pin Count 6
See Relate Datesheet

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