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PBSS4112PANP,115

PBSS4112PANP - 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PBSS4112PANP,115
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 846
  • Description: PBSS4112PANP - 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Base Part Number PBSS4112PAN
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Case Connection COLLECTOR
Power - Max 510mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 120mV @ 50mA, 500mA
Current - Collector (Ic) (Max) 1A
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -150mV
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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