PBSS4260PANP,115
| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 90mV @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 2A |
| Transition Frequency | 140MHz |
| Collector Emitter Saturation Voltage | -100mV |
| Frequency - Transition | 140MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 7V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 1.45W |
| Base Part Number | PBSS4260 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | NPN, PNP |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Power - Max | 510mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Transistor Type | NPN, PNP |
See Relate Datesheet
