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PBSS5130PAP,115

PBSS5130PAP - 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PBSS5130PAP,115
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 961
  • Description: PBSS5130PAP - 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Base Part Number PBSS5130
Pin Count 6
Polarity PNP
Element Configuration Dual
Power - Max 510mW
Gain Bandwidth Product 125MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) -30V
Max Collector Current -2A
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 280mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Collector Emitter Saturation Voltage -85mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -7V
hFE Min 250
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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