PBSS5160DS,115
| Parameters | |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 330mV @ 100mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 770mA |
| Transition Frequency | 220MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Max Junction Temperature (Tj) | 150°C |
| Ambient Temperature Range High | 150°C |
| Height | 1.1mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | PBSS5160DS |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | PNP |
| Power Dissipation | 290mW |
| Power - Max | 420mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 185MHz |
| Transistor Type | 2 PNP (Dual) |
| Collector Emitter Voltage (VCEO) | -60V |
| Max Collector Current | -1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
See Relate Datesheet
