Parameters | |
---|---|
Number of Elements | 2 |
Polarity | PNP |
Element Configuration | Dual |
Power Dissipation | 200mW |
Power - Max | 510mW |
Gain Bandwidth Product | 95MHz |
Transistor Type | 2 PNP (Dual) |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | -3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 420mv @ 100mA, 2A |
Current - Collector (Ic) (Max) | 2A |
Collector Emitter Saturation Voltage | -75mV |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | -7V |
hFE Min | 260 |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Number of Pins | 6 |
Operating Temperature | 150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2013 |
JESD-609 Code | e3 |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Terminal Finish | Tin (Sn) |
Max Power Dissipation | 1.45W |
Frequency | 95MHz |
Pin Count | 6 |