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PBSS5580PA,115

PBSS5580PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PBSS5580PA,115
  • Package: 3-PowerUDFN
  • Datasheet: PDF
  • Stock: 299
  • Description: PBSS5580PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-PowerUDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.1W
Terminal Position DUAL
Frequency 110MHz
Base Part Number PBSS5580
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 420mV @ 200mA, 4A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 110MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -7V
hFE Min 70
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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