Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
Tolerance | 5% |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Max Power Dissipation | 480mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 100MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | PBSS9110 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 480mW |
Transistor Application | SWITCHING |
Test Current | 5mA |
Gain Bandwidth Product | 100MHz |
Polarity/Channel Type | PNP |
Zener Voltage | 16V |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA 5V |
Current - Collector Cutoff (Max) | 100nA |
Vce Saturation (Max) @ Ib, Ic | 320mV @ 100mA, 1A |
Collector Emitter Breakdown Voltage | 100V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | 320mV |
Max Breakdown Voltage | 100V |
Collector Base Voltage (VCBO) | 120V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 150 |
Height | 1mm |
Length | 3mm |
Width | 1.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |