Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Package / Case | 8-PowerVDFN |
Number of Pins | 8 |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | MATTE TIN |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 3.1V |
Max Power Dissipation | 26.7W |
Terminal Position | QUAD |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 5A |
Frequency | 500MHz |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | PD54008 |
Pin Count | 14 |
JESD-30 Code | S-PQCC-N5 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 26.7W |
Case Connection | SOURCE |
Current - Test | 200mA |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 25V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Continuous Drain Current (ID) | 5A |
Gate to Source Voltage (Vgs) | 15V |
Max Output Power | 8W |
Drain Current-Max (Abs) (ID) | 5A |
Drain to Source Breakdown Voltage | 25V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 7.5V |
Power Gain | 15dB |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |