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PD55008TR-E

TRANSISTOR RF POWERSO-10


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-PD55008TR-E
  • Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Datasheet: PDF
  • Stock: 687
  • Description: TRANSISTOR RF POWERSO-10 (Kg)

Details

Tags

Parameters
Current Rating 4A
Frequency 500MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PD55008
Pin Count 10
JESD-30 Code R-PDSO-G2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 52.8W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Gain 17dB
Max Output Power 8W
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 52.8W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
See Relate Datesheet

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