Parameters | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Continuous Drain Current (ID) | 250mA |
Gate to Source Voltage (Vgs) | 20V |
Gain | 15dB |
Drain Current-Max (Abs) (ID) | 0.25A |
Drain to Source Breakdown Voltage | 65V |
Power - Output | 2W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 28V |
RoHS Status | ROHS3 Compliant |
Mount | Surface Mount |
Package / Case | PowerSO-10 Exposed Bottom Pad |
Number of Pins | 10 |
Packaging | Tube |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 4.75W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | 250mA |
Frequency | 960MHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | PD57002 |
Pin Count | 2 |
JESD-30 Code | R-PDSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 4.75W |
Case Connection | SOURCE |
Current - Test | 10mA |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 65V |