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PD57006TR-E

TRANSISTOR RF POWERSO-10


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-PD57006TR-E
  • Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Datasheet: PDF
  • Stock: 516
  • Description: TRANSISTOR RF POWERSO-10 (Kg)

Details

Tags

Parameters
Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins 4
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation 20W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
Reach Compliance Code not_compliant
Current Rating 1A
Frequency 945MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PD57006
Pin Count 10
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Case Connection SOURCE
Current - Test 70mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Gain 15dB
Max Output Power 6W
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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