PD57018-E
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Number of Pins | 3 |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 65V |
| Max Power Dissipation | 31.7W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 250 |
| Current Rating | 2.5A |
| Frequency | 945MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | PD57018 |
| Pin Count | 10 |
| JESD-30 Code | R-PDSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 31.7W |
| Case Connection | SOURCE |
| Current - Test | 100mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 65V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 2.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Output Power | 18W |
| Drain to Source Breakdown Voltage | 65V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 760mOhm |
| Voltage - Test | 28V |
| Min Breakdown Voltage | 65V |
| Power Gain | 16.5dB |
| Height | 3.5mm |
| Length | 7.5mm |
| Width | 9.4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
