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PD57060TR-E

Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Formed lead) T/R


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-PD57060TR-E
  • Package: PowerSO-10 Exposed Bottom Pad
  • Datasheet: PDF
  • Stock: 251
  • Description: Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Formed lead) T/R (Kg)

Details

Tags

Parameters
Pin Count 10
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection SOURCE
Current - Test 100mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Gain 14.3dB
Max Output Power 60W
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 79W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
Reach Compliance Code not_compliant
Current Rating 7A
Frequency 945MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PD57060
See Relate Datesheet

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