Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 8 months ago) |
Mount | Surface Mount |
Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Number of Pins | 3 |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Max Operating Temperature | 165°C |
Min Operating Temperature | -65°C |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 95W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 250 |
Current Rating | 8A |
Frequency | 870MHz |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | PD84010 |
Pin Count | 10 |
JESD-30 Code | R-PDSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 95W |
Case Connection | SOURCE |
Current - Test | 300mA |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 40V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Continuous Drain Current (ID) | 8A |
Gate to Source Voltage (Vgs) | 15V |
Gain | 16.3dB |
Max Output Power | 10W |
Drain Current-Max (Abs) (ID) | 8A |
Drain to Source Breakdown Voltage | 40V |
Power - Output | 2W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 7.5V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |