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PDTD113ZT,215

PDTD113ZT - NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PDTD113ZT,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 175
  • Description: PDTD113ZT - NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm (Kg)

Details

Tags

Parameters
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 10
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number PDTD113
Pin Count 3
Max Output Current 500mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 250mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 70
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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