PEMD3,115
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 4.535924g |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Max Power Dissipation | 300mW |
| Terminal Form | FLAT |
| Base Part Number | P*MD3 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | NPN, PNP |
| Element Configuration | Dual |
| Power Dissipation | 300mW |
| Transistor Application | SWITCHING |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA 5V |
| Current - Collector Cutoff (Max) | 1μA |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 50V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 30 |
| Resistor - Base (R1) | 10k Ω |
| Resistor - Emitter Base (R2) | 10k Ω |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
