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PEMH7,115

NEXPERIA - PEMH7,115 - Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 4.7 kohm


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PEMH7,115
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 252
  • Description: NEXPERIA - PEMH7,115 - Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 4.7 kohm (Kg)

Details

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Parameters
Max Breakdown Voltage 50V
hFE Min 200
Resistor - Base (R1) 4.7k Ω
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 4.535924g
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR
Max Power Dissipation 300mW
Terminal Form FLAT
Base Part Number P*MH7
Pin Count 6
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 300mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
See Relate Datesheet

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