PH2520U,115
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2009 |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.75 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.7m Ω @ 25A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 5850pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain-source On Resistance-Max | 0.0039Ohm |
| Pulsed Drain Current-Max (IDM) | 300A |
| DS Breakdown Voltage-Min | 20V |
| Avalanche Energy Rating (Eas) | 250 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
