PH3135-65M
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Package / Case | Metal |
| Surface Mount | YES |
| Number of Pins | 2 |
| Transistor Element Material | SILICON |
| Operating Temperature | 200°C TJ |
| Packaging | Tray |
| Published | 2009 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Additional Feature | WITH EMITTER BALLASTING RESISTORS |
| Subcategory | Other Transistors |
| Max Power Dissipation | 65W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Case Connection | BASE |
| Power - Max | 65W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 65V |
| Max Collector Current | 7.7A |
| Collector Emitter Breakdown Voltage | 65V |
| Gain | 8.23dB ~ 9.09dB |
| Highest Frequency Band | S B |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
