PH8230E,115
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Number of Pins | 5 |
| Packaging | Cut Tape (CT) |
| Published | 1997 |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Reference Standard | IEC-60134 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 62.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 28 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.2m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 67A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
| Rise Time | 44ns |
| Fall Time (Typ) | 21 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 67A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0132Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 268A |
| Height | 1.1mm |
| Length | 5mm |
| Width | 4.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
