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PHB33NQ20T,118

MOSFET N-CH 200V 32.7A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PHB33NQ20T,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 596
  • Description: MOSFET N-CH 200V 32.7A D2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 77m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32.7A Tc
Gate Charge (Qg) (Max) @ Vgs 32.2nC @ 10V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 32.7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain-source On Resistance-Max 0.077Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 65.4A
Avalanche Energy Rating (Eas) 190 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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