Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.75 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 230W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 230W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 77m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 32.7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 32.2nC @ 10V |
Rise Time | 35ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 45 ns |
Turn-Off Delay Time | 43 ns |
Continuous Drain Current (ID) | 32.7A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 200V |
Drain-source On Resistance-Max | 0.077Ohm |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 65.4A |
Avalanche Energy Rating (Eas) | 190 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |