PHD101NQ03LT,118
| Parameters | |
|---|---|
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | 75A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 30V |
| Drain-source On Resistance-Max | 0.0075Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 240A |
| Avalanche Energy Rating (Eas) | 185 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| HTS Code | 8541.29.00.75 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 166W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 166W |
| Case Connection | DRAIN |
| Turn On Delay Time | 23 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.5m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 5V |
| Rise Time | 90ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
See Relate Datesheet
