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PHD9NQ20T,118

MOSFET N-CH 200V 8.7A DPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PHD9NQ20T,118
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 661
  • Description: MOSFET N-CH 200V 8.7A DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 88W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 959pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 8.7A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 200V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 200V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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