PHK04P02T,518
| Parameters | |
|---|---|
| Rise Time | 4.5ns |
| Drain to Source Voltage (Vdss) | 16V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 4.66A |
| JEDEC-95 Code | MS-012AA |
| Gate to Source Voltage (Vgs) | 8V |
| Max Dual Supply Voltage | -16V |
| Drain-source On Resistance-Max | 0.15Ohm |
| Drain to Source Breakdown Voltage | -16V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 5W |
| Turn On Delay Time | 2 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 120m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 600mV @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 528pF @ 12.8V |
| Current - Continuous Drain (Id) @ 25°C | 4.66A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 4.5V |
See Relate Datesheet
