Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
Series | TrenchMOS™ |
JESD-609 Code | e4 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 2 (1 Year) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.5W Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10.5m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1335pF @ 16V |
Gate Charge (Qg) (Max) @ Vgs | 17.6nC @ 5V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 11.8A |
JEDEC-95 Code | MS-012AA |
Drain Current-Max (Abs) (ID) | 12A |
Drain-source On Resistance-Max | 0.0105Ohm |
Pulsed Drain Current-Max (IDM) | 35.3A |
DS Breakdown Voltage-Min | 30V |
Avalanche Energy Rating (Eas) | 440 mJ |
RoHS Status | Non-RoHS Compliant |