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PHK12NQ03LT,518

MOSFET N-CH 30V 11.8A SOT96


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PHK12NQ03LT,518
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 503
  • Description: MOSFET N-CH 30V 11.8A SOT96 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series TrenchMOS™
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1335pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 17.6nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 11.8A
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0105Ohm
Pulsed Drain Current-Max (IDM) 35.3A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 440 mJ
RoHS Status Non-RoHS Compliant
See Relate Datesheet

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