Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
Series | TrenchMOS™ |
JESD-609 Code | e4 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 2 (1 Year) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | NICKEL PALLADIUM GOLD |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 8 |
Number of Elements | 1 |
Power Dissipation-Max | 6.9W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 6.9W |
Turn On Delay Time | 37 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.4m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 4235pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 30.4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 4.5V |
Rise Time | 62ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 26 ns |
Turn-Off Delay Time | 54 ns |
Continuous Drain Current (ID) | 30.4A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 30V |
Drain-source On Resistance-Max | 0.0075Ohm |
Drain to Source Breakdown Voltage | 30V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |