PHP191NQ06LT,127
| Parameters | |
|---|---|
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 63 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.7m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7665pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Factory Lead Time | 1 Week |
| Gate Charge (Qg) (Max) @ Vgs | 95.6nC @ 5V |
| Mounting Type | Through Hole |
| Rise Time | 232ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Fall Time (Typ) | 178 ns |
| Package / Case | TO-220-3 |
| Turn-Off Delay Time | 273 ns |
| Surface Mount | NO |
| Continuous Drain Current (ID) | 75A |
| Gate to Source Voltage (Vgs) | 15V |
| Number of Pins | 3 |
| Max Dual Supply Voltage | 55V |
| Weight | 6.000006g |
| Drain-source On Resistance-Max | 0.0044Ohm |
| Drain to Source Breakdown Voltage | 55V |
| Transistor Element Material | SILICON |
| Pulsed Drain Current-Max (IDM) | 240A |
| Operating Temperature | -55°C~175°C TJ |
| Avalanche Energy Rating (Eas) | 560 mJ |
| Packaging | Tube |
| Height | 9.4mm |
| Published | 2010 |
| Length | 10.3mm |
| Series | TrenchMOS™ |
| Width | 4.7mm |
| Radiation Hardening | No |
| JESD-609 Code | e3 |
| RoHS Status | ROHS3 Compliant |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 300W Tc |
See Relate Datesheet
