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PHP23NQ11T,127

MOSFET N-CH 110V 23A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PHP23NQ11T,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 992
  • Description: MOSFET N-CH 110V 23A TO220AB (Kg)

Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 39ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 110V
Drain-source On Resistance-Max 0.07Ohm
Drain to Source Breakdown Voltage 110V
Pulsed Drain Current-Max (IDM) 92A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 100W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V
See Relate Datesheet

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