Parameters | |
---|---|
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 300mA Ta |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 300mA |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain to Source Breakdown Voltage | 60V |
Nominal Vgs | 2 V |
Min Breakdown Voltage | 60V |
Height | 1mm |
Length | 3mm |
Width | 1.4mm |
Radiation Hardening | No |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
REACH SVHC | No SVHC |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
RoHS Status | ROHS3 Compliant |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Lead Free | Lead Free |
Published | 1997 |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 5Ohm |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 830mW Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 830mW |
FET Type | N-Channel |