PMBFJ309,215
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW NOISE |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MBFJ309 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Power - Max | 250mW |
| FET Type | N-Channel |
| Transistor Application | AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V |
| JEDEC-95 Code | TO-236AB |
| DS Breakdown Voltage-Min | 25V |
| FET Technology | JUNCTION |
| Power Dissipation-Max (Abs) | 0.25W |
| Feedback Cap-Max (Crss) | 2.5 pF |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Current - Drain (Idss) @ Vds (Vgs=0) | 12mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) | 25V |
| Resistance - RDS(On) | 50Ohm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
