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PMBT3906M,315

PMBT3906M,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PMBT3906M,315
  • Package: SC-101, SOT-883
  • Datasheet: PDF
  • Stock: 125
  • Description: PMBT3906M,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

Details

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Parameters
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -6V
hFE Min 180
Turn On Time-Max (ton) 70ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 590mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PMBT3906
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 560mW
Case Connection COLLECTOR
Power - Max 590mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
See Relate Datesheet

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