Parameters | |
---|---|
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
Current - Collector Cutoff (Max) | 50nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
Collector Emitter Breakdown Voltage | 40V |
Transition Frequency | 250MHz |
Max Breakdown Voltage | 40V |
Collector Base Voltage (VCBO) | 40V |
Emitter Base Voltage (VEBO) | -6V |
hFE Min | 180 |
Turn Off Time-Max (toff) | 300ns |
Turn On Time-Max (ton) | 70ns |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | Automotive, AEC-Q101 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Terminal Finish | Tin (Sn) |
Max Power Dissipation | 360mW |
Terminal Form | FLAT |
Frequency | 250MHz |
Base Part Number | PMBT3906VS |
Pin Count | 6 |
Number of Elements | 2 |
Polarity | PNP |
Element Configuration | Dual |
Power Dissipation | 360mW |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 250MHz |
Transistor Type | 2 PNP (Dual) |
Collector Emitter Voltage (VCEO) | 40V |
Max Collector Current | 200mA |