PMBT5550,235
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 250mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | PMBT5550 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250mW |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 100MHz |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 6V |
| VCEsat-Max | 0.25 V |
| Collector-Base Capacitance-Max | 6pF |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
