Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | BALL |
Reference Standard | IEC-60134 |
JESD-30 Code | S-PBGA-B4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 400mW Ta 12.5W Tc |
Operating Mode | ENHANCEMENT MODE |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 95m Ω @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Drain Current-Max (Abs) (ID) | 3.2A |
Drain-source On Resistance-Max | 0.095Ohm |
DS Breakdown Voltage-Min | 20V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 4-XFBGA, WLCSP |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |