PMCXB900UEZ
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Max Power Dissipation | 265mW |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N and P-Channel Complementary |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 620m Ω @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 600mA 500mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Continuous Drain Current (ID) | 500mA |
| Gate to Source Voltage (Vgs) | 8V |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
