PMEG100V100ELPDAZ
| Parameters | |
|---|---|
| Operating Temperature - Junction | 175°C Max |
| Application | EFFICIENCY |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 10A |
| Number of Phases | 1 |
| Reverse Recovery Time | 14 ns |
| Capacitance @ Vr, F | 135pF @ 10V 1MHz |
| Non-rep Pk Forward Current-Max | 170A |
| Reverse Current-Max | 0.8μA |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | R-PDSO-F3 |
| Operating Temperature (Max) | 175°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation-Max | 1.66W |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 1μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 850mV @ 10A |
| Case Connection | CATHODE |
See Relate Datesheet
