PMEG2010EPA,115
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-PowerUDFN |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Terminal Position | DUAL |
| Base Part Number | PMEG2010 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 0.96W |
| Element Configuration | Common Anode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 1.9mA @ 20V |
| Voltage - Forward (Vf) (Max) @ If | 375mV @ 1A |
| Case Connection | CATHODE |
| Max Reverse Leakage Current | 1.9mA |
| Operating Temperature - Junction | 150°C Max |
| Max Surge Current | 17A |
| Output Current-Max | 1A |
| Forward Voltage | 375mV |
| Max Reverse Voltage (DC) | 20V |
| Average Rectified Current | 1A |
| Reverse Recovery Time | 50 ns |
| Peak Reverse Current | 1.9mA |
| Max Repetitive Reverse Voltage (Vrrm) | 20V |
| Capacitance @ Vr, F | 175pF @ 1V 1MHz |
| Peak Non-Repetitive Surge Current | 17A |
| Recovery Time | 50 ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
