Parameters | |
---|---|
Terminal Position | DUAL |
Pin Count | 2 |
Reference Standard | AEC-Q101 |
Number of Elements | 1 |
Power Dissipation-Max | 0.41W |
Element Configuration | Single |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 600μA @ 20V |
Voltage - Forward (Vf) (Max) @ If | 415mV @ 1A |
Case Connection | CATHODE |
Forward Current | 1A |
Operating Temperature - Junction | 150°C Max |
Output Current-Max | 1A |
Forward Voltage | 415mV |
Max Reverse Voltage (DC) | 20V |
Average Rectified Current | 1A |
Reverse Recovery Time | 4 ns |
Peak Reverse Current | 600μA |
Max Repetitive Reverse Voltage (Vrrm) | 20V |
Capacitance @ Vr, F | 65pF @ 1V 1MHz |
Peak Non-Repetitive Surge Current | 5A |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 2-XDFN |
Number of Pins | 2 |
Diode Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |