Parameters | |
---|---|
Max Surge Current | 50A |
Output Current-Max | 4.2A |
Application | EFFICIENCY |
Forward Voltage | 460mV |
Max Reverse Voltage (DC) | 60V |
Average Rectified Current | 3A |
Number of Phases | 1 |
Reverse Recovery Time | 12 ns |
Peak Reverse Current | 200μA |
Max Repetitive Reverse Voltage (Vrrm) | 60V |
Capacitance @ Vr, F | 360pF @ 1V 1MHz |
Peak Non-Repetitive Surge Current | 50A |
Reverse Voltage | 60V |
Max Forward Surge Current (Ifsm) | 50A |
Recovery Time | 12 ns |
Max Junction Temperature (Tj) | 175°C |
Ambient Temperature Range High | 175°C |
Natural Thermal Resistance | 12 °C/W |
Height | 1.1mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOD-128 |
Diode Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Max Power Dissipation | 2.5W |
Terminal Position | DUAL |
Terminal Form | FLAT |
Base Part Number | PMEG6030 |
Pin Count | 2 |
Reference Standard | AEC-Q101; IEC-60134 |
JESD-30 Code | R-PDSO-F2 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 200μA @ 60V |
Voltage - Forward (Vf) (Max) @ If | 530mV @ 3A |
Forward Current | 3A |
Max Reverse Leakage Current | 200μA |
Operating Temperature - Junction | 175°C Max |