Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1997 |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.75 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PDSO-G3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 560mW Tc |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 340m Ω @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 1.02A Tc |
Gate Charge (Qg) (Max) @ Vgs | 0.89nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Drain Current-Max (Abs) (ID) | 1.02A |
Drain-source On Resistance-Max | 0.34Ohm |
DS Breakdown Voltage-Min | 20V |
RoHS Status | ROHS3 Compliant |