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PMF280UN,115

MOSFET N-CH 20V 1.02A SOT323


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-PMF280UN,115
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 870
  • Description: MOSFET N-CH 20V 1.02A SOT323 (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 560mW Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 340m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 20V
Current - Continuous Drain (Id) @ 25°C 1.02A Tc
Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 1.02A
Drain-source On Resistance-Max 0.34Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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