Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Number of Pins | 6 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 6 |
Number of Channels | 1 |
Power Dissipation-Max | 485mW Ta 6.25W Tc |
Element Configuration | Single |
Turn On Delay Time | 6 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 102m Ω @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 2.7A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
Rise Time | 14ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 50 ns |
Turn-Off Delay Time | 120 ns |
Continuous Drain Current (ID) | 2.7A |
Gate to Source Voltage (Vgs) | -600mV |
Max Dual Supply Voltage | -20V |
Drain to Source Breakdown Voltage | -20V |
FET Feature | Schottky Diode (Isolated) |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |