Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | TrenchMOS™ |
JESD-609 Code | e4 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 2 (1 Year) |
Number of Terminations | 8 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 6.9W Tc |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 10 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 19m Ω @ 9.2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2240pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 14.9A Tc |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 56 ns |
Continuous Drain Current (ID) | 14.9A |
JEDEC-95 Code | MS-012AA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -30V |
Drain-source On Resistance-Max | 0.019Ohm |
RoHS Status | RoHS Compliant |