Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Supplier Device Package | 8-SO |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | TrenchMOS™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 2 (1 Year) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Power Dissipation-Max | 5W Tc |
Element Configuration | Single |
Power Dissipation | 5W |
Turn On Delay Time | 8.5 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 50mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 7.9A Tc |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Rise Time | 7.5ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 35 ns |
Turn-Off Delay Time | 82 ns |
Continuous Drain Current (ID) | 7.9A |
Gate to Source Voltage (Vgs) | 12V |
Max Dual Supply Voltage | -20V |
Drain to Source Breakdown Voltage | -20V |
Input Capacitance | 1.02nF |
Drain to Source Resistance | 50mOhm |
Rds On Max | 10 mΩ |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |