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PML260SN,118

MOSFET N-CH 200V 8.8A 8HVSON


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-PML260SN,118
  • Package: 8-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 159
  • Description: MOSFET N-CH 200V 8.8A 8HVSON (Kg)

Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 294m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 657pF @ 30V
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Gate Charge (Qg) (Max) @ Vgs 13.3nC @ 10V
Rise Time 11ns
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Surface Mount YES
Vgs (Max) ±20V
Number of Pins 8
Transistor Element Material SILICON
Fall Time (Typ) 7 ns
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 19 ns
Packaging Tape & Reel (TR)
Continuous Drain Current (ID) 8.8A
Published 2006
Gate to Source Voltage (Vgs) 20V
Series TrenchMOS™
Max Dual Supply Voltage 200V
JESD-609 Code e4
Drain-source On Resistance-Max 0.294Ohm
Part Status Obsolete
Drain to Source Breakdown Voltage 200V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pulsed Drain Current-Max (IDM) 15A
Number of Terminations 8
Avalanche Energy Rating (Eas) 22 mJ
ECCN Code EAR99
Radiation Hardening No
Terminal Finish NICKEL PALLADIUM GOLD
RoHS Status RoHS Compliant
Subcategory FET General Purpose Power
Lead Free Lead Free
See Relate Datesheet

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