Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 8 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 50W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 50W |
Case Connection | DRAIN |
Turn On Delay Time | 7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 294m Ω @ 2.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 657pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 8.8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 13.3nC @ 10V |
Rise Time | 11ns |
Mounting Type | Surface Mount |
Package / Case | 8-VDFN Exposed Pad |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Surface Mount | YES |
Vgs (Max) | ±20V |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Fall Time (Typ) | 7 ns |
Operating Temperature | -55°C~150°C TJ |
Turn-Off Delay Time | 19 ns |
Packaging | Tape & Reel (TR) |
Continuous Drain Current (ID) | 8.8A |
Published | 2006 |
Gate to Source Voltage (Vgs) | 20V |
Series | TrenchMOS™ |
Max Dual Supply Voltage | 200V |
JESD-609 Code | e4 |
Drain-source On Resistance-Max | 0.294Ohm |
Part Status | Obsolete |
Drain to Source Breakdown Voltage | 200V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Pulsed Drain Current-Max (IDM) | 15A |
Number of Terminations | 8 |
Avalanche Energy Rating (Eas) | 22 mJ |
ECCN Code | EAR99 |
Radiation Hardening | No |
Terminal Finish | NICKEL PALLADIUM GOLD |
RoHS Status | RoHS Compliant |
Subcategory | FET General Purpose Power |
Lead Free | Lead Free |